IKW50N65ES5XKSA1 IGBT Transistors INDUSTRY 14

ʻO ka wehewehe pōkole:

Nā mea hana: Infineon Technologies
Māhele Huahana: Transistors – IGBTs – Single
Pepa ʻikepili:IKW50N65ES5XKSA1
ʻO ka wehewehe: IGBT TRENCH 650V 80A TO247-3
ʻO ke kūlana RoHS: RoHS Compliant


Huahana Huahana

Nā hiʻohiʻona

Nā noi

Huahana Huahana

♠ wehewehe huahana

Huahana Huahana Waiwai Hiʻona
Mea hana: Infineon
Māhele Huahana: IGBT Transistors
ʻenehana: Si
Pūʻolo / hihia: TO-247-3
Kāila kau ʻana: Ma o Hole
Hoʻonohonoho: hoʻokahi
Mea hōʻiliʻili- Emitter Voltage VCEO Max: 650 V
ʻOhi-Emitter Saturation Voltage: 1.35 V
ʻO ka Voltage Emitter Voltage kiʻekiʻe loa: 20 V
ʻO ka ʻohi ʻohi mau ma 25 C: 80 A
Pd - Hoʻopau Mana: 274 W
Mahana hana liʻiliʻi loa: - 40 C
ʻO ka wela hoʻohana kiʻekiʻe loa: + 175 C
moʻo: TRENCHSTOP 5 S5
Packaging: Paipu
Brand: ʻenehana Infineon
Puka-Emitter Leaka o kēia manawa: 100 nA
Kiʻekiʻe: 20.7 mm
Ka lōʻihi: 15.87 mm
ʻAno Huahana: IGBT Transistors
Ka nui o ka waihona hale hana: 240
Māhele ʻāpana: Nā IGBT
inoa kalepa: TRENCHSTOP
laula: 5.31 mm
Māhele # Aliases: IKW50N65ES5 SP001319682
Huina Weight: 0.213537 oz

 


  • Mua:
  • Aʻe:

  • HighspeedS5technology offering
    •mea hoʻololi paʻakikī a paʻakikī
    •LowVCEsat,1.35Vatnominalcurrent
    • Plugandplay replacement of previous generationIGBTs
    •650Vbreakdownvoltage
    •LowgatechargeQG
    IGBTcopacked with fullratedRAPID1fastantiparalleldiode
    •Maximumjunctiontemperature175°C
    • Kupono e like meJEDEC no nā noi i hoʻopaʻa ʻia
    •Pb-freeleadplating;RoHScompliant
    • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

    •Resonantconverters
    •Nā lako mana ʻole
    • Weldingconverters
    •Midtohighrangeswitchingfrequencyconverters

    Nā Huahana Pili