SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ wehewehe huahana
Huahana Huahana | Waiwai Hiʻona |
Mea hana: | ʻo Vishay |
Māhele Huahana: | MOSFET |
RoHS: | Nā kikoʻī |
ʻenehana: | Si |
Kāila kau ʻana: | SMD/SMT |
Pūʻolo/Mahi: | SOIC-8 |
Transistor Polarity: | N-Kula |
Ka helu o nā kaha: | 2 Kanal |
Vds - Ka Voltage Hoʻohaʻahaʻa Punawai: | 60 V |
Id - Hoʻokuʻu mau i kēia manawa: | 5.3 A |
Rds On - Kū'ē Kūmole Waiwai: | 58 mOhms |
Vgs - Puke-Puna Voltage: | - 20 V, + 20 V |
Vgs th - Puka Puka Puka Uila Voltage: | 1 V |
Qg - Uku ʻīpuka: | 13 nC |
Mahana hana liʻiliʻi loa: | - 55 C |
ʻO ka wela hoʻohana kiʻekiʻe loa: | + 150 C |
Pd - Hoʻopau Mana: | 3.1 W |
Ke ano Kanal: | Hoʻonui |
inoa kalepa: | TrenchFET |
Packaging: | Reel |
Packaging: | ʻOki lipine |
Packaging: | Huli ʻIole |
Brand: | Vishay Semiconductors |
Hoʻonohonoho: | Pālua |
Wā hāʻule: | 10 ns |
ʻO ka hoʻokō ʻana i mua - Min: | 15 S |
ʻAno Huahana: | MOSFET |
Ka manawa ala: | 15 ns, 65 ns |
moʻo: | SI9 |
Ka nui o ka waihona hale hana: | 2500 |
Māhele ʻāpana: | MOSFET |
ʻAno Transistor: | 2 N-Kanela |
Manawa hoʻopanee maʻamau: | 10 ns, 15 ns |
Manawa hoʻola maʻamau: | 15 ns, 20 ns |
Māhele # Aliases: | SI9945BDY-GE3 |
Huina Weight: | 750 mg |
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