SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ wehewehe huahana
| Huahana Huahana | Waiwai Hiʻona |
| Mea hana: | ʻo Vishay |
| Māhele Huahana: | MOSFET |
| RoHS: | Nā kikoʻī |
| ʻenehana: | Si |
| Kāila kau ʻana: | SMD/SMT |
| Pūʻolo/Mahi: | PowerPAK-1212-8 |
| Transistor Polarity: | P-Kanala |
| Ka helu o nā kaha: | 1 Kanal |
| Vds - Ka Voltage Hoʻohaʻahaʻa Punawai: | 200 V |
| Id - Hoʻokuʻu mau i kēia manawa: | 3.8 A |
| Rds On - Kū'ē Kūmole Waiwai: | 1.05 Ohms |
| Vgs - Puke-Puna Voltage: | - 20 V, + 20 V |
| Vgs th - Puka Puka Puka Uila Voltage: | 2 V |
| Qg - Uku ʻīpuka: | 25 nC |
| Mahana hana liʻiliʻi loa: | - 50 C |
| ʻO ka wela hoʻohana kiʻekiʻe loa: | + 150 C |
| Pd - Hoʻopau Mana: | 52 W |
| Ke ano Kanal: | Hoʻonui |
| inoa kalepa: | TrenchFET |
| Packaging: | Reel |
| Packaging: | ʻOki lipine |
| Packaging: | Huli ʻIole |
| Brand: | Vishay Semiconductors |
| Hoʻonohonoho: | hoʻokahi |
| Hāʻule manawa: | 12 ns |
| ʻO ka hoʻokō ʻana i mua - Min: | 4 S |
| Kiʻekiʻe: | 1.04 mm |
| Ka lōʻihi: | 3.3 mm |
| ʻAno Huahana: | MOSFET |
| Ka manawa ala: | 11 ns |
| moʻo: | SI7 |
| Ka nui o ka waihona hale hana: | 3000 |
| Māhele ʻāpana: | MOSFET |
| ʻAno Transistor: | 1 P-Kanela |
| Manawa hoʻopanee maʻamau: | 27 ns |
| Manawa hoʻola maʻamau: | 9 ns |
| laula: | 3.3 mm |
| Māhele # Aliases: | SI7119DN-GE3 |
| Huina Wehe: | 1 g |
• Halogen-noa Wahi a IEC 61249-2-21 Loaʻa
• TrenchFET® Power MOSFET
• Pākīpika PowerPAK® Resistance Thermal me ka liʻiliʻi liʻiliʻi a me ka haʻahaʻa 1.07 mm Profile
• 100 % UIS a me Rg Hoao
• Hoʻopili ikaika i nā lako mana DC/DC waena
