SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ wehewehe huahana
| Huahana Huahana | Waiwai Hiʻona |
| Mea hana: | ʻo Vishay |
| Māhele Huahana: | MOSFET |
| ʻenehana: | Si |
| Kāila kau ʻana: | SMD/SMT |
| Pūʻolo / hihia: | SOT-23-3 |
| Transistor Polarity: | P-Kanala |
| Ka helu o nā kaha: | 1 Kanal |
| Vds - Ka Voltage Hoʻohaʻahaʻa Punawai: | 8 V |
| Id - Hoʻokuʻu mau i kēia manawa: | 5.8 A |
| Rds On - Kū'ē Kūmole Waiwai: | 35 mOhms |
| Vgs - Puke-Puna Voltage: | - 8 V, + 8 V |
| Vgs th - Puka Puka Puka Uila Voltage: | 1 V |
| Qg - Uku ʻīpuka: | 12 nC |
| Mahana hana liʻiliʻi loa: | - 55 C |
| ʻO ka wela hoʻohana kiʻekiʻe loa: | + 150 C |
| Pd - Hoʻopau Mana: | 1.7 W |
| Ke ano Kanal: | Hoʻonui |
| inoa kalepa: | TrenchFET |
| Packaging: | Reel |
| Packaging: | ʻOki lipine |
| Packaging: | Huli ʻIole |
| Brand: | Vishay Semiconductors |
| Hoʻonohonoho: | hoʻokahi |
| Hāʻule manawa: | 10 ns |
| Kiʻekiʻe: | 1.45 mm |
| Ka lōʻihi: | 2.9 mm |
| ʻAno Huahana: | MOSFET |
| Ka manawa ala: | 20 ns |
| moʻo: | SI2 |
| Ka nui o ka waihona hale hana: | 3000 |
| Māhele ʻāpana: | MOSFET |
| ʻAno Transistor: | 1 P-Kanela |
| Manawa hoʻopanee maʻamau: | 40 ns |
| Manawa hoʻola maʻamau: | 20 ns |
| laula: | 1.6 mm |
| Māhele # Aliases: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Huina Wehe: | 0.000282 oz |
• Halogen-noa E like me ka IEC 61249-2-21 Wehewehe
• TrenchFET® Power MOSFET
• 100 % Rg Hoao
• Hoʻokō i ka RoHS Directive 2002/95/EC
• Hoʻouka i ka hoʻololi no nā mea lawe lima
• Mea hoʻololi DC/DC
