SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ wehewehe huahana
| Huahana Huahana | Waiwai Hiʻona |
| Mea hana: | ʻo Vishay |
| Māhele Huahana: | MOSFET |
| RoHS: | Nā kikoʻī |
| ʻenehana: | Si |
| Kāila kau ʻana: | SMD/SMT |
| Pūʻolo/Mahi: | SC-89-6 |
| Transistor Polarity: | N-Kanela, P-Kanela |
| Ka helu o nā kaha: | 2 Kanal |
| Vds - Ka Voltage Hoʻohaʻahaʻa Punawai: | 60 V |
| Id - Hoʻokuʻu mau i kēia manawa: | 500 mA |
| Rds On - Kū'ē Kūmole Waiwai: | 1.4 Ohms, 4 Ohms |
| Vgs - Puke-Puna Voltage: | - 20 V, + 20 V |
| Vgs th - Puka Puka Puka Uila Voltage: | 1 V |
| Qg - Uku ʻīpuka: | 750 pC, 1.7 nC |
| Mahana hana liʻiliʻi loa: | - 55 C |
| ʻO ka wela hoʻohana kiʻekiʻe loa: | + 150 C |
| Pd - Hoʻopau Mana: | 280 mW |
| Ke ano Kanal: | Hoʻonui |
| inoa kalepa: | TrenchFET |
| Packaging: | Reel |
| Packaging: | ʻOki lipine |
| Packaging: | Huli ʻIole |
| Brand: | Vishay Semiconductors |
| Hoʻonohonoho: | Pālua |
| ʻO ka hoʻokō ʻana i mua - Min: | 200 mS, 100 mS |
| Kiʻekiʻe: | 0.6 mm |
| Ka lōʻihi: | 1.66 mm |
| ʻAno Huahana: | MOSFET |
| moʻo: | SI1 |
| Ka nui o ka waihona hale hana: | 3000 |
| Māhele ʻāpana: | MOSFET |
| ʻAno Transistor: | 1-N-Kanela, 1-P-Kanal |
| Manawa hoʻopanee maʻamau: | 20 ns, 35 ns |
| Manawa hoʻola maʻamau: | 15 ns, 20 ns |
| laula: | 1.2 mm |
| Māhele # Aliases: | SI1029X-GE3 |
| Huina Weight: | 32 mg |
• Halogen-noa E like me ka IEC 61249-2-21 Wehewehe
• Nā MOSFET Power TrenchFET®
• Ka wāwae liʻiliʻi loa
• Hoʻololi ʻaoʻao kiʻekiʻe
• Haʻahaʻa ma ke kū'ē:
N-Kula, 1.40 Ω
Ka-P, 4 Ω
• Paepae Haʻahaʻa: ± 2 V (ʻano.)
• Holo wikiwiki: 15 ns (ʻano.)
• Puka-Source ESD Palekana: 2000 V
• Hoʻokō i ka RoHS Directive 2002/95/EC
• Hoʻololi i ka Transistor Digital, Level-Shifter
• Pūnaehana Paahana
• Nā Kaapuni hoʻololi mana
