ʻO kahi ʻano hou o ka hafnium-based ferroelectric memory chip i hoʻomohala ʻia a hoʻolālā ʻia e Liu Ming, Academician o ka Institute of Microelectronics, i hōʻike ʻia ma ka IEEE International Solid-State Circuits Conference (ISSCC) i 2023, ke kiʻekiʻe kiʻekiʻe o ka hoʻolālā circuit integrated.
Loaʻa i ka hoʻomanaʻo non-volatile hoʻokō kiʻekiʻe (eNVM) i ke koi nui no nā chips SOC i nā mea uila uila, nā kaʻa autonomous, ka mana ʻoihana a me nā ʻaoʻao no ka Pūnaewele o nā Mea. ʻO ka hoʻomanaʻo Ferroelectric (FeRAM) nā mea maikaʻi o ka hilinaʻi kiʻekiʻe, ka hoʻohana mana ultra-haʻahaʻa, a me ka wikiwiki kiʻekiʻe. Hoʻohana nui ʻia ia i ka nui o ka hoʻopaʻa ʻana i ka ʻikepili i ka manawa maoli, ka heluhelu ʻana a me ke kākau ʻana i ka ʻikepili, ka hoʻohana haʻahaʻa haʻahaʻa a me nā huahana SoC/SiP i hoʻopili ʻia. ʻO ka hoʻomanaʻo Ferroelectric e pili ana i ka mea PZT ua loaʻa i ka hana nui, akā ʻaʻole kūpono kāna mea me ka ʻenehana CMOS a paʻakikī ke emi, e alakaʻi ana i ke kaʻina hoʻomohala o ka hoʻomanaʻo ferroelectric kuʻuna i hoʻopaʻa ʻia, a pono ka hoʻohui ʻana i kahi kākoʻo laina hana ʻokoʻa. ʻO ka liʻiliʻi o ka hoʻomanaʻo ferroelectric hou me ka hafnium-based a me kona kūlike me ka ʻenehana CMOS e lilo ia i wahi wela noiʻi o ka hopohopo maʻamau i ka ʻoihana aʻoaʻo a me ka ʻoihana. Ua manaʻo ʻia ʻo Hafnium-based ferroelectric memory ma ke ʻano he alakaʻi hoʻomohala koʻikoʻi o ka hanauna hou o ka hoʻomanaʻo hou. I kēia manawa, ʻo ka noiʻi ʻana o ka hoʻomanaʻo ferroelectric e pili ana i ka hafnium he mau pilikia e like me ka lawa ʻole o ka pono o ka ʻāpana, ka nele o ka hoʻolālā chip me ke kaapuni peripheral piha, a me ka hōʻoia hou ʻana i ka hana pae chip, e kaupalena ana i kāna noi ma eNVM.
Ke manaʻo nei i nā luʻi i kū ʻia e ka hoʻomanaʻo ferroelectric e pili ana i ka hafnium, ua hoʻolālā a hoʻokō ka hui o Academician Liu Ming mai ka Institute of Microelectronics i ka megab-magnitude FeRAM hōʻike chip no ka manawa mua ma ka honua e pili ana i ka paepae hoʻohui nui o ka hafnium-based ferroelectric hoʻomanaʻo i hoʻopaʻa ʻia me ka CMOS nui. capacitor ferroelectric i ke kaʻina hana CMOS 130nm. Hoʻolālā ʻia kahi kaapuni kaʻa kākau i kōkua ʻia e ECC no ka ʻike wela a me kahi kaapuni hoʻonui koʻikoʻi no ka hoʻopau ʻana i ka offset, a ua loaʻa ka 1012 pōʻai lōʻihi a me ka 7ns kākau a me ka manawa heluhelu 5ns, ʻo ia nā pae maikaʻi loa i hōʻike ʻia i kēia manawa.
ʻO ka pepa "He 9-Mb HZO-based Embedded FeRAM me 1012-Cycle Endurance a me 5/7ns Heluhelu / Kākau me ka hoʻohana ʻana i ka ECC-Assisted Data Refresh" e pili ana i nā hopena a me ka Offset-Canceled Sense Amplifier "ua koho ʻia ma ISSCC 2023, a ua koho ʻia ka chip i ka ʻaha kūkā o ka ISSCC i hōʻike ʻia ʻo Jiang Sessusion. pepa, a ʻo Liu Ming ka mea kākau.
Kākoʻo ʻia ka hana pili e ka National Natural Science Foundation o Kina, ka National Key Research and Development Program o ka Ministry of Science and Technology, a me ka B-Class Pilot Project o ka Chinese Academy of Sciences.
(Kiʻi o 9Mb Hafnium-based FeRAM chip and chip performance test)
Ka manawa hoʻouna: Apr-15-2023
