IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ wehewehe huahana
| Huahana Huahana | Waiwai Hiʻona |
| Mea hana: | Infineon |
| Māhele Huahana: | IGBT Transistors |
| ʻenehana: | Si |
| Pūʻolo / hihia: | TO-247-3 |
| Kāila kau ʻana: | Ma o Hole |
| Hoʻonohonoho: | hoʻokahi |
| Mea hōʻiliʻili- Emitter Voltage VCEO Max: | 650 V |
| ʻOhi-Emitter Saturation Voltage: | 1.65 V |
| ʻO ka Voltage Emitter Voltage kiʻekiʻe loa: | 20 V |
| ʻO ka ʻohi ʻohi mau ma 25 C: | 80 A |
| Pd - Hoʻopau Mana: | 275 W |
| Mahana hana liʻiliʻi loa: | - 40 C |
| ʻO ka wela hoʻohana kiʻekiʻe loa: | + 175 C |
| moʻo: | Trenchstop IGBT5 |
| Packaging: | Paipu |
| Brand: | ʻenehana Infineon |
| Puka-Emitter Leaka o kēia manawa: | 100 nA |
| Kiʻekiʻe: | 20.7 mm |
| Ka lōʻihi: | 15.87 mm |
| ʻAno Huahana: | IGBT Transistors |
| Ka nui o ka waihona hale hana: | 240 |
| Māhele ʻāpana: | Nā IGBT |
| inoa kalepa: | TRENCHSTOP |
| laula: | 5.31 mm |
| Māhele # Aliases: | IKW50N65EH5 SP001257944 |
| Huina Wehe: | 0.213383 oz |
HighspeedH5technology offering
•Oi loa-i-Classefficiency i hardswitchingandresonant topologies
• Plugandplay replacement of previous generationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
IGBT i hoʻopili pū ʻia me RAPID1fastandsoftantiparallel diode
•Maximumjunctiontemperature175°C
• Kupono e like meJEDEC no nā noi i hoʻopaʻa ʻia
•Pb-freeleadplating;RoHScompliant
• CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Nā lako mana ʻole
• Nā mea hoʻololi lā
• Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
