FDV301N MOSFET N-Ch Kikohoʻe
♠ wehewehe huahana
| Huahana Huahana | Waiwai Hiʻona |
| Mea hana: | onsemi |
| Māhele Huahana: | MOSFET |
| RoHS: | Nā kikoʻī |
| ʻenehana: | Si |
| Kāila kau ʻana: | SMD/SMT |
| Pūʻolo / hihia: | SOT-23-3 |
| Transistor Polarity: | N-Kula |
| Ka helu o nā kaha: | 1 Kanal |
| Vds - Ka Voltage Hoʻohaʻahaʻa Punawai: | 25 V |
| Id - Hoʻokuʻu mau i kēia manawa: | 220 mA |
| Rds On - Kū'ē Kūmole Waiwai: | 5 Ohms |
| Vgs - Puke-Puna Voltage: | - 8 V, + 8 V |
| Vgs th - Puka Puka Puka Uila Voltage: | 700 mV |
| Qg - Uku ʻīpuka: | 700 pC |
| Mahana hana liʻiliʻi loa: | - 55 C |
| ʻO ka wela hoʻohana kiʻekiʻe loa: | + 150 C |
| Pd - Hoʻopau Mana: | 350 mW |
| Ke ano Kanal: | Hoʻonui |
| Packaging: | Reel |
| Packaging: | ʻOki lipine |
| Packaging: | Huli ʻIole |
| Brand: | onsemi / Fairchild |
| Hoʻonohonoho: | hoʻokahi |
| Wā hāʻule: | 6 ns |
| ʻO ka hoʻokō ʻana i mua - Min: | 0.2 S |
| Kiʻekiʻe: | 1.2 mm |
| Ka lōʻihi: | 2.9 mm |
| Huahana: | MOSFET hōʻailona liʻiliʻi |
| ʻAno Huahana: | MOSFET |
| Ka manawa ala: | 6 ns |
| moʻo: | FDV301N |
| Ka nui o ka waihona hale hana: | 3000 |
| Māhele ʻāpana: | MOSFET |
| ʻAno Transistor: | 1 N-Kanela |
| ʻAno: | FET |
| Manawa hoʻopanee maʻamau: | 3.5 ns |
| Manawa hoʻola maʻamau: | 3.2 ns |
| laula: | 1.3 mm |
| Māhele # Aliases: | FDV301N_NL |
| Huina Weight: | 0.000282 oz |
♠ FET kikohoʻe, N-Kānana FDV301N, FDV301N-F169
Hana ʻia kēia N−Channel logic level enhancement mode field effect transistor me ka hoʻohana ʻana i ka onsemi proprietary, high cell density, DMOS technology.Hoʻopili pono ʻia kēia kaʻina hana hoʻopaʻa kiʻekiʻe loa e hōʻemi i ke kūʻē o ka mokuʻāina.Ua hoʻolālā ʻia kēia mea hana no nā noi uila haʻahaʻa ma ke ʻano he pani no nā transistors kikohoʻe.No ka mea ʻaʻole koi ʻia nā mea kū'ē bias, hiki i kēia N−channel FET ke hoʻololi i kekahi mau transistors kikohoʻe like ʻole, me nā kumu kūʻai kūʻē bias.
• 25 V, 0.22 A mau, 0.5 A Kiekie
♦ RDS(ma) = 5 @ VGS = 2.7 V
♦ RDS(ma) = 4 @ VGS = 4.5 V
• Loa Ha'aha'a Ha'aha'a Ha'aha'a Haʻahaʻa Haʻahaʻa Haʻahaʻa Haʻahaʻa Haʻahaʻa loa Gate Drive Koi e ae pololei hana ma 3 V kaapuni.VGS(th) < 1.06 V
• Puka−Source Zener no ka ESD Ruggedness.> 6 kV Ke Kino Kanaka
• Hoʻololi i nā Transistors Kikohoʻe NPN Nui me hoʻokahi FET DMOS
• Pb−Free a me Halide Free keia mea
